Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering
Abstract
The electrical and optical properties of Ga-doped ZnO (GZO) thin film prepared by direct current (dc) magnetron sputtering were investigated. The GZO thin film was deposited on a glass substrate at a substrate temperature (Ts) of room temperature (RT), 150 °C, and 200 °C using DC power of 100 W and an Ar gas flow rate of 450 sccm. The thickness of films was maintained at about 200 nm by controlling the deposition rate of about 12.5 nm/minute. The result showed that the electrical properties improved with increasing Ts. The films deposited at Ts of 200 °C showed the lowest resistivity, highest hall mobility, and carrier concentration compared to other Ts. The average transmittance of the films in the visible range (380-750 nm) was approximately 86.04%. The value of the optical band gap (Eg) was approximately 3.8 eV. The results suggested that GZO films deposited by DC magnetron sputtering at Ts of 200 °C can be applied to transparent conducting oxide (TCO) as an electrode in optoelectronic applications such as solar cells, LEDs and display technology.
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References
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[2] A. K. Ambedkara, M. Singh, V. Kumar, V. Kumar, B. P. Singh, A. Kumar, Y. K. Gautam, “Structural, optical and thermoelectric properties of Al-doped ZnO thin films prepared by spray pyrolysis†Surfaces and Interfaces, vol 19, pp. 100504, June 2020.
[3] B. Yuliarto, L. Nulhakim, M.F. Ramadhani, M. Iqbal, Nugraha, Suyatman and A. Nuruddin, “Improved performance of ethanol sensor fabricated on Al-doped ZnO nanosheet thin films,†IEEE Sensors Journal, vol. 15, pp. 4114-4120, July 2015.
[4] L. Nulhakim and H. Makino, “Control of microstructure by using self-buffer layer and its effects on properties of Ga-doped ZnO thin films deposited by radio frequency magnetron sputtering,†Thin Solid Films, vol. 615, pp. 158-164, July 2016.
[5] L. Nulhakim and H. Makino, “Change of scattering mechanism and annealing out of defects on Ga-doped ZnO films deposited by radio-frequency magnetron sputtering,†Journal of Applied Physics, vol. 119, 235302 pp. 1-7, June 2016.
[6] L. Nulhakim and H. Makino, “Influence of polarity inversion on the electrical properties of Ga-doped ZnO thin films,†Physica Status Solidi (RRL) - Rapid Research Letters, vol. 10, 7 pp. 535-539 May 2016.
[7] L. Nulhakim, H. Makino, S. Kishimoto, J. Nomoto, and T. Yamamoto, “Enhancement of the hydrogen gas sensitivity by large distribution of c-axis preferred orientation in highly Ga-doped ZnO polycrystalline thin films,†Materials Science in Semiconductor Processing, vol. 68, pp. 322-326, June 2017.
[8] B. Sahoo, D. Behera, S. K. Pradhan, D. K. Mishra, S. K. Sahoo, R. R. Nayak, and K. P. C. Sekhar, “Analysis of structural, optical and electrical properties of nano-particulate indium doped zinc oxide thin films†Material Research Express, vol. 6, pp. 1150a6, October 2019.
[9] K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties†Journal of Applied Physics, vol. 125, pp. 195701, May 2019.
[10] H. Morkoc and U. Ozgur, “Zinc Oxide: Fundamentals, Materials and Device Technology,†WILEY-VCH Verlag GmbH & Co. KGaA, Winheim, 2009, pp. 246.
[11] T. Minami, T. Miyata, and J. Nomoto, “Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells†in E-MRS 2011 Fall Symposium I: Advances in Transparent Electronics, from Materials to Devices III, 2012, 012001 pp. 1-17.
[12] J-K Sheu, Y.S. Lu, M-L. Lee, W.C. Lai, C.H. Kuo, and C-J.Tun, “Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer†Applied Physics Letter, vol. 90, pp. 263511, June 2007.
[13] N. Yamamoto, H. Makino, S. Osone, A. Ujihara, T. Ito, H. Hokari, T. Maruyama, and T. Yamamoto, “Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels,†Thin Solid Films, vol. 520, pp. 4131-4138, April 2012.
[14] G. Helwig, “Elektrische Leitfähigkeit und Struktur aufgestäubter Kadmiumoxydschichten,†Zeitschrift für Physik, vol 132, pp. 621-642, October 1952.
[15] G. Rupprecht, “Untersuchungen der elektrischen und lichtelektrischen Leitfähigkeit dünner Indiumoxydschichten,†Zeitschrift für Physik, vol. 139, pp. 504-517, October 1954.
[16] T. Minami, “Substitution of transparent conducting oxide thin films for indium tin oxide transparent electrode applications,†Thin Solid Films, vol. 516, pp. 1314-1321, February 2008.
[17] T. Yamamoto, T. Yamada, A. Miyake, H. Makino, and N. Yamamoto, “Gaâ€doped zinc oxide: An attractive potential substitute for ITO, largeâ€area coating, and control of electrical and optical properties on glass and polymer substrates,†Journal of the Society for Information Display, vol. 16, pp. 713-719, June 2012.
[18] T. Minami, “Transparent conducting oxide semiconductors for transparent electrodes,†Semiconductor Science and Technology, vol. 20, pp. S35, March 2005.
[19] K. Elmer, A. Klein, B. Rech, “Transparent conductive zinc oxide, basics and applications in thin film solar cells,†Springer, Verlag Berlin Heidelberg, 2008, pp.187-350.
[20] C. Agashe, O. Kluth, J. Hüpkes, U. Zastrow, B. Rech, and M. Wuttig, “Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films,†Journal of Applied Physics, vol. 95, pp. 1911, January 2004.
[21] I. Shtepliuk, V. Khranovskyy, D. Gogova, M. Danilson, M. Krunks, I. G. Ivanov, and R. Yakimova, “Excitonic emission in heavily Ga-doped zinc oxide films grown on GaNâ€, Journal of Luminescence, vol. 223, pp. 117265, July 2020.
[22] A. Bikowski, T. Welzel, and K. Ellmer, “The impact of negative oxygen ion bombardment on electronic and structural properties of magnetron sputtered ZnO:Al films,†Applied Physics Letter, vol. 102, pp. 242106, June 2013.
[23] D. C. Look, T. C. Droubay, and S. A. Chambers, “Stable highly conductive ZnO via reduction of Zn vacancies,†Applied Physics Letter, vol. 101, pp. 102101, September 2012.
[24] H. Makino, T. Yamada, N. Yamamoto, and T. Yamamoto, “Effects of the O2 flow rate and post-deposition thermal annealing on the optical absorption spectra of Ga-doped ZnO films,†Thin Solid Films, vol. 519, pp. 1521–1524, December 2010.
[25] H. Peelaers, E. Kioupakis, and C. G. Van de Walle, “Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2,†Applied Physics Letter, vol. 100, pp. 011914, January 2012.
[26] I. Hamberg, C. G. Granqvist, K. F. Berggren, B. E. Sernellius, and L. Engstrom, “Band-gap widening in heavily Sn-doped In2O3,†Physical Review B, vol. 30, pp. 3240, September 1984.
[27] B. E. Sernelius, K. F. Berggren, Z. C. Jin, I. Hamberg, and C. G. Granqvist, “Band-gap tailoring of ZnO by means of heavy Al doping,†Physical Review B, vol. 37, pp. 10244, June 1988.
[28] H. Cheng, H. Deng, Y. Wang, and M. Wei, “Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films†Journal of Alloys and Compounds, vol. 705, pp. 598-601, May 2017
[29] N. Srinatha, P. Raghu, H. M. Mahesh, and B. Angadi, “Spin-coated Al-doped ZnO thin films for optical applications: Structural, micro-structural, optical and luminescence studiesâ€, Journal of Alloys and Compounds, vol. 722, pp. 888-895, October 2017.
Published
2020-06-15
How to Cite
NULHAKIM, Lukman et al.
Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering.
Journal of Science and Applicative Technology, [S.l.], v. 4, n. 1, p. 15-20, june 2020.
ISSN 2581-0545.
Available at: <https://journal.itera.ac.id/index.php/jsat/article/view/264>. Date accessed: 25 apr. 2024.
doi: https://doi.org/10.35472/jsat.v4i1.264.
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